| PART |
Description |
Maker |
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| PMBT3946VPN |
40 V, 200 mA NPN/PNP switching transistor
40 V, 200 mA NPN-PNP switching transistor 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| MJ4502_D ON1994 MJ4502 |
30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS
From old datasheet system
|
Motorola, Inc.
ON Semi
|
| MJ3281A NH1302A |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS
COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR TRANSISTOR
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
PNP Low Sat Transistor
TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
Zetex Semiconductor PLC
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MMPQ3906 |
SURFACE MOUNT PNP SILICON QUAD TRANSISTOR 200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| MMST39062 MMST3906-7-F |
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
TRANS PNP BIPOLAR 40V SOT323 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes, Inc.
|
| SBTC-2-20_20L SBTC-2-20 SBTC-2-20L SBTC-2-2020L |
Power Splitter/Combiners 2 Way-050з 200 to 2000 MHz 200 MHz - 2000 MHz RF/MICROWAVE COMBINER, 2.2 dB INSERTION LOSS
Power Splitter/Combiners 2 Way-0° 50 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 200 to 2000 MHz
Power Splitter/Combiners 2 Way-0 50 200 to 2000 MHz
|
MINI[Mini-Circuits]
|
| APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
Advanced Power Technology
|
| PMBT3906M |
40 V, 200 mA PNP switching transistor
|
NXP Semiconductors
|
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